STMicroelectronics Announced Family of MOSFETs

STMicroelectronics has announced a family of MOSFETs that combine enhanced switching performance with on-resistance. The first device in the Super-Junction FDmesh II family is the STW55NM60ND, a 600V N-channel MOSFET offering the on-resistance of 0.060 Ohms for MOSFETs in the standard TO-247 package. The peak drain current of 51A allows one MOSFET to replace multiple components in converters for space-constrained applications such as telecom and server systems. Combined with savings in thermal management due to reduced losses, this allows designers to significantly increase power density. The devices also have high dv/dt rating for higher reliability during switching, particularly in bridge-type topologies including Zero Voltage Switching (ZVS) under light-load conditions. The devices include STP30NM60ND, rated to 25A drain current and achieving 0.13 Ohms on-resistance in the TO-220 package. The STD11NM60ND for applications up to 10A has 0.45 Ohms on-resistance in the surface-mount DPAK package. ST will progressively introduce additional devices in the FDmesh II series, providing an extensive range of voltage and current ratings in industry-standard power packages. The STW55NM60ND is now available in production volumes at $10 in quantities of 1000 units and higher.