STMicroelectronics Reduces On-Resistance for MOSFETs

STMicroelectronics has announced a family of MOSFETs that combine enhanced switching performance with on-resistance improved by more than 18% over existing devices, to meet the needs of applications, including renewable-energy controllers. The STW55NM60ND Super-Junction FDmesh II MOSFET is 600 V N-channel unit offering on-resistance of 0.060 . It also features peak drain current of 51 A. FDmesh super-junction architecture combines vertical structure with conventional strip MOSFET, which is designed in TO-247 package. Product has high dv/dt rating for reliability during switching, particularly in bridge-type topologies including Zero Voltage Switching (ZVS) under light-load conditions. The STW55NM60ND is now available in production volumes at $10 in quantities of 1000 units and higher.