NXP Delivers Power Efficiency on LDMOS Base Stations

NXP Semiconductors has launched its BLC7G22L(S)-130 base station power transistor to feature NXP’s Gen7 LDMOS technology – optimized for power use and Doherty amplifier applications. The Gen7 Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology enables the LDMOS solutions available, increasing power density by 20 percent and improving power efficiency by two percent, while reducing the thermal resistance Rth by over 25 percent compared to the previous generation. First prototypes of the NXP Gen7 LDMOS base station prior transistor will be demonstrated at the IEEE MTT-S International Microwave Symposium 2008 in Atlanta, Georgia. The Gen7 LDMOS delivers record performance up to 3.8 GHz, and offers 25 percent lower output capacitance, enabling wideband output matching and leading to simplified, better performing Doherty amplifier designs. Doherty has emerged as the amplifier architecture of choice for new base station transmitters, helping wireless network operators to increase efficiency and reduce operating costs.