Alchimer S.A. has launched eG ViaCoat eG series of electrochemical coating processes, for the metallization of high aspect ratio through-silicon vias (TSVs) used in advanced 3D packaging applications. The eG ViaCoat produces conformal, thin, uniform and adherent copper seed layers, even on resistive barriers. It enables significant reductions in cost of ownership (CoO) compared to dry vacuum processes. Typical PVD processes have already reached their limitations in terms of producing continuous layers for vias with aspect ratios of 5:1. The eG ViaCoat demonstrates conformal sidewall and bottom coverage, even when deposited on discontinuous surfaces such as highly ‘scalloped’ TSV etch profiles. It is compatible with standard barrier materials, including, but not limited to, PVD, CVD and ALD deposited Ta, TaN, Ti, TiN, WN, Ru and bi-layers.
The eG ViaCoat is based on Alchimer's proprietary electrografting technology. Electrografting (eG) is an electrochemical process based on specific organic precursors enabling the initiation and growth of nanometric films on conductive or semiconducting surfaces. The eG ViaCoat is suitable for all applications requiring Cu metallization of TSVs: high-density vias for 3D-ICs such as stacking of memories, medium and low-density vias for image sensors, heterogeneous components integration and System-in-Package applications.
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