Freescale Launches 50-volt LDMOS Power Transistors for L-Band Radar Apps

Freescale Semiconductor has unveiled its 50-volt LDMOS RF power transistor line-up for L-Band radar applications. The line-up is for a range of high-power RF applications including air traffic management and long range weather radar. The RF product line includes the MRF6V14300H final stage device and the MRF6V10010N driver. The MRF6V14300H produces pulsed RF output power of 330 W at frequencies between 1200 and 1400 MHz for gain and thermal resistance at this power level and frequency when compared to competing bipolar and field-effect transistor (FET) devices. The thermal resistance of Freescale's MRF6V14300H device, packaged in a RoHS compliant, air-cavity ceramic package, is less than 0.12o C/W JC, which is engineered to effectively manage heat dissipation and reduce heat sink size. The MRF6V10010N is in an over-molded plastic package, also offering thermal performance. Key RF performance figures for the MRF6V14300H include 1200 to 1400 MHz frequency range, 330 W peak output power (at 1400 MHz, 300 ?sec pulse width, 12 percent duty cycle), 17 dB gain, and 60 percent drain efficiency.



The RF devices are based on sixth-generation, high-voltage (VHV6) 50 V LDMOS technology. Commercialized for the first time by Freescale, the 50 V VHV6 LDMOS platform demonstrates gain and efficiency. When combined with innovations in device packaging and thermal management, VHV6 technology helps reduce device count and lower system costs through increases in rated power per transistor. The MRF6V10010N is sampling now and in production. The MRF6V14300H is sampling, and full production is expected in Q3 2008. A broadband reference text fixture for the MRF6V14300H is available. Large-signal models are expected to be available for both devices in late 2008.