International Rectifier (IR) has introduced its 25V synchronous buck converter DirectFET MOSFET chipset for point-of-load (POL) converter designs, and server, high-end desktop and notebook computer applications. The 25V chipset combines HEXFET MOSFET silicon and benchmark DirectFET packaging technology to deliver a high density, single control and single synchronous MOSFET solution in the footprint of an SO-8, and with slim 0.7 mm profile. The IRF6710S2, IRF6795M and IRF6797M devices are characterised with very low on-resistance (RDS (on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase. The IRF6710S2 is suited as a control MOSFET due to the device's low gate resistance of 0.3 Ohms and low Miller charge (Qgd) of 3.0 nC which reduces switching losses. The IRF6795M and IRF6797M feature extremely low RDS (on) to reduce conduction losses while the integrated Schottky reduces diode conduction losses and reverse recovery losses making these devices well suited for high current synchronous MOSFET circuits. The IRF6795M and IRF6797M have a common MX footprint to allow easy migration from existing SyncFET devices.
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